منابع مشابه
Offset stable piezoresistive high-temperature pressure sensors based on silicon
The exploitation of new application fields and the drive to size reduction even in highly stable pressure sensing systems makes the extension of the operating temperature range of the microelectromechanical sensors (MEMS) essential. For this reason a silicon-based pressure sensor with an application temperature ranging up to 300 C and the associated manufacturing technology was developed. With ...
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We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 °C. The previously observed maximum drift of ± 10 mV of the reference offset voltage at 600 °C was reduced to within ± 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructu...
متن کاملOffset and Drift Analysis of the Hall Effect Sensors. the Geometrical Parameters Influence
Several Hall sensor configurations have been integrated in CMOS 0.35 μm technology and analyzed in terms of offset at room temperature and offset drift. We searched for the best geometry that would minimize the offset and its corresponding drift. The targeted specifications were ±30 μT for offset at room temperature and ±0.3 μT/°C for the drift. The measurement setup developed to test the Hall ...
متن کاملHigh Frequency Amplitude Detector for GMI Magnetic Sensors
A new concept of a high-frequency amplitude detector and demodulator for Giant-Magneto-Impedance (GMI) sensors is presented. This concept combines a half wave rectifier, with outstanding capabilities and high speed, and a feedback approach that ensures the amplitude detection with easily adjustable gain. The developed detector is capable of measuring high-frequency and very low amplitude signal...
متن کاملOffset-free offset correction for active pixel sensors
We describe a method to improve the reading of active pixels, so that this FPN is cancelled, with as final result a better cosmetic quality of the image. Several solutions to this problem have been proposed in literature. We described a technique based upon shifting the threshold voltage of the source follower transistor in the pixel [1] and a correction technique with a dedicated co-processor ...
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ژورنال
عنوان ژورنال: Sensors and Actuators A: Physical
سال: 2008
ISSN: 0924-4247
DOI: 10.1016/j.sna.2008.05.016